Product Description:
The TS128MSQ64V8U is a 128M x 64bits DDR2-800 SO-DIMM. The
TS128MSQ64V8U consists of 8pcs 128Mx8bits DDR2 SDRAMs in FBGA packages
and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The
TS128MSQ64V8U is a Dual In-Line Memory Module and is intended for
mounting into 200-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system
clock. Data I/O transactions are possible on both edges of DQS. Range
of operation frequencies, programmable latencies allow the same device
to be useful for a variety of high bandwidth, high performance memory
system applications.
- RoHS compliant products.
- JEDEC standard 1.8V ± 0.1V Power supply
- VDDQ=1.8V ± 0.1V
- Max clock Freq: 400MHZ; 800Mb/s/Pin.
- Posted CAS
- Programmable CAS Latency: 4, 5, 6
- Programmable Additive Latency: 0, 1, 2, 3, 4, 5
- Write Latency (WL) = Read Latency (RL)-1
- Burst Length: 4, 8(Interleave/nibble sequential)
- Programmable sequential / Interleave Burst Mode
- Bi-directional Differential Data-Strobe (Single-ended data-strobe
is an optional feature)
- Off-Chip Driver (OCD) Impedance Adjustment
- MRS cycle with address key programs.
- On Die Termination
- Refresh: Auto Refresh and Self Refresh
Average Refresh Period : 7.8us at lower then 85°C
- Serial presence detect with EEPROM
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[It may take 2-3 weeks to ship out]
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