Product Description:
The TS256MSQ64V6U is a 256M x 64bits DDR2-667 SO-DIMM. The
TS256MSQ64V6U consists of 16pcs 128Mx8bits DDR2 SDRAMs in 60 ball FBGA
packages and a 2048 bits serial EEPROM on a 200-pin printed circuit
board. The TS256MSQ64V6U is a Dual In-Line Memory Module and is
intended for mounting into 200-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system
clock. Data I/O transactions are possible on both edges of DQS. Range
of operation frequencies, programmable latencies allow the same device
to be useful for a variety of high bandwidth, high performance memory
system applications.
- RoHS compliant products.
- JEDEC standard 1.8V ± 0.1V Power supply
- VDDQ=1.8V ± 0.1V
- Max clock Freq: 333MHZ; 667Mb/s/Pin.
- Posted CAS
- Programmable CAS Latency: 3,4,5
- Programmable Additive Latency :0, 1,2,3 and 4
- Write Latency (WL) = Read Latency (RL)-1
- Burst Length: 4,8(Interleave/nibble sequential)
- Programmable sequential / Interleave Burst Mode
- Bi-directional Differential Data-Strobe (Single-ended data-strobe
is an optional feature)
- Off-Chip Driver (OCD) Impedance Adjustment
- MRS cycle with address key programs.
- On Die Termination
- Serial presence detect with EEPROM
| Product Type |
RAM Module |
| Memory Speed |
667MHz |
| Form Factor |
200-pin SoDIMM |
| Memory Size |
2GB |
| Memory Technology |
DDR2 SDRAM |
| Dimensions |
0.04" Thickness x 1.18" Width x 2.66"
Length |
| Signal Processing |
Unbuffered |
|
[It may take 2-3 weeks to ship out]
INTERNATIONAL GROUND SHIPPING: 
