Specification

Feature:

• Dynamic Write Acceleration
• Redundant Array of Independent NAND (RAIN)
• Multistep Data Integrity Algorithms
• Adaptive Thermal Protection
• Integrated Power Loss Immunity
• Active Garbage Collection
• TRIM Support
• NVMe standard Self-Monitoring and Reporting Technology (SMART)
• Error Correction Code (ECC)
• NVMe Autonomous Power State Transition (APST) Support

• Mfr Part Number: CT2000P5SSD8
• Capacity: 2 TB
• Form Factor: M.2 2280
• Interface: N/A
• NAND Flash: 3D NAND
• Performance:
  • Sequential Read Rate: 3400 MB/s
  • Sequential Write Rate: 3000 MB/s
• Endurance: 1200 TBW
• MTTF: 2,000,000 hours
• Operating Temperature: 0 °C to 70 °C
• Certifications: CE, FCC, VCCI, KC, RCM, ICES, Morocco, BSMI, Ukraine, UL, TUV, China RoHS, WEEE, Halogen Free
• Dimensions (WxDxH): N/A